PART |
Description |
Maker |
NAND02GR3B2BZA1 NAND02GR4B2BZA6 NAND02GR3B2BZB1 NA |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,2112 Byte/1056字的页面.8V/3V,NAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,2112 Byte/1056字的页面1.8V/3V,NAND闪存
|
意法半导 STMicroelectronics N.V.
|
NAND04G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,4千兆位,8千兆112 Byte/1056字的页面.8V/3V,NAND闪存
|
STMicroelectronics N.V.
|
NAND02GW4B2DN6E NAND02GW4B2DN6F NAND02G-B2D NAND02 |
2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
|
Numonyx B.V
|
NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
A29DL323 A29DL323TG-90 A29DL323TV-90 A29DL323UG-90 |
32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
|
AMICC[AMIC Technology]
|
A29DL324TG-90 A29DL324TV-90 A29DL324UG-90 |
32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
|
http:// AMIC Technology Corporation
|
UPD23C64040JL UPD23C64040JLGX-XXX UPD23C64040JLGY- |
64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC[NEC]
|
MC-4R256CPE6C-653 MC-4R256CPE6C-745 MC-4R256CPE6C- |
Direct Rambus?/a> DRAM RIMM?/a> Module 256M-BYTE (128M-WORD x 16-BIT) Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT) Direct Rambus垄芒 DRAM RIMM垄芒 Module 256M-BYTE (128M-WORD x 16-BIT)
|
http:// Elpida Memory
|
V23832-R111-M101 V23832-R311-M101 V23832-R511-M101 |
PAROLI 2 Tx AC, 1.6 Gbit/s Parallel Optical Links (PAROLI) - PAROLI?2 Tx AC, 1.6 Gbit/s, multistandard electrical interface Parallel Optical Links (PAROLI) - PAROLI?2 Rx AC, 1.6 Gbit/s, PAROLI 2 Tx AC/ 2.7 Gbit/s PAROLI 2 Tx AC/ 1.25 Gbit/s PAROLI 2 Tx AC/ 1.6 Gbit/s
|
Infineon Technologies AG
|
UPD23C32300GZ-XXX-MJH UPD23C32300 UPD23C32300F9-BC |
32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) 32兆位掩膜可编程ROM的分位(字节模式 200万字6位(字模式) CAP 0.01UF 100V 5% X7R SMD-0805 TR-13 PLATED-NI/SN 32兆位掩膜可编程ROM的分位(字节模式 200万字6位(字模式)
|
NEC, Corp. NEC Corp. NEC[NEC]
|